1 watt metal case zener diodes www. microsemi . com scottsdale division 1n3016b thru 1n3051b, e3 1n3016b ? 1n3051b, e3 description appearance this well established zener diode series for the 1n3016 thru 1n3051 jedec registration in the metal case do-13 package provides a glass hermetic seal for 6.8 to 200 volts. it is also well suited for high-reliability applications where it is available in jan, jantx, and jantxv military qualifications. lower voltages are also available in the 1n3821 thru 1n3830 series (3.3 v to 7.5 v) in the same package (see separate data sheet). microsemi also offers numerous other zener diode products for a variety of other packages including surface mount. do-13 important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? zener voltage range: 6.8v to 200v ? hermetically sealed do-13 metal package ? internally solder-bonded construction. ? also available in jan, jantx, jantxv qualifications per mil-prf19500/115 by adding the jan, jantx, or jantxv prefixes to part numbers for desired level of screening, e.g. jantx1n3016b, jantxv1n3051b, etc. ? surface mount also available with 1n3016bur-1 thru 1n3051bur-1 series on separate data sheet ? rohs compliant devices available by adding ?e3? suffix ? regulates voltage over a broad operating current and temperature range ? wide selection from 6.8 to 200 v ? tight voltage tolerances available ? low reverse (leakage) currents ? nonsensitive to esd ? hermetically sealed metal package ? inherently radiation hard as described in microsemi micronote 050 maximum ratings mechanical and packaging ? operating junction and storage temperatures: -65 o c to +175 o c ? thermal resistance: 50 o c/w* junction to lead at 0.375 inches (10 mm) from body or 110 o c/w junction to ambient when leads are mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm ? dc power dissipation * : 1.0 watt at t l < +125 o c 3/8? (10 mm) from body or 1.0 watts at t l < +65 o c when mounted on fr4 pc board as described for thermal resistance above (also see fig 1) ? forward voltage @ 200 ma: 1.5 volts. ? solder temperatures: 260 o c for 10 s (maximum) ? case: do-13 (do-202aa), welded, hermetically sealed metal and glass ? finish: all external surfaces are tin-lead (pb/sn) or rohs compliant annealed matte-tin (sn) plating and solderable per mil-std-750 method 2026 ? polarity: cathode connected case. ? weight: 1.4 grams. ? tape & reel option: standard per eia-296 (add ?tr? suffix to part number) ? see package dimensions on last page * for further mounting reference options, thermal resistance from junction to metal case is < 20 o c/w when mounting do-13 metal case directly on heat sink. microsemi scottsdale division page 1 copyright ? 2006 3-12-2006 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
1 watt metal case zener diodes www. microsemi . com scottsdale division 1n3016b thru 1n3051b, e3 1n3016b ? 1n3051b, e3 *electrical characteristics @ 25 o c maximum zener impedance (note 3) nominal zener voltage v z @ i zt (note 2) zener test current i zt z zt @ i zt z zk @ i zk maximum zener current i zm (note 4) maximum reverse leakage current? i r @ v r typical temp. coeff. of zener voltage vz jedec type number (note 1) volts ma ohms ohms ma ma a volts %/ o c 1n3016b 1n3017b 1n3018b 1n3019b 6.8 7.5 8.2 9.1 37 34 31 28 3.5 4.0 4.5 5 700 700 700 700 1.0 .5 .5 .5 140 125 115 105 150 100 50 25 5.2 5.7 6.2 6.9 .040 .045 .048 .050 1n3020b 1n3021b 1n3022b 1n3023b 10 11 12 13 25 23 21 19 7 8 9 10 700 700 700 700 .25 .25 .25 .25 95 85 80 74 25 10 10 10 7.6 8.4 9.1 9.9 .055 .060 .065 .065 1n3024b 1n3025b 1n3026b 1n3027b 15 16 18 20 17 15.5 14 12.5 14 16 20 22 700 700 750 750 .25 .25 .25 .25 63 60 52 47 10 10 10 10 11.4 12.2 13.7 15.2 .070 .070 .075 .075 1n3028b 1n3029b 1n3030b 1n3031b 22 24 27 30 11.5 10.5 9.5 8.5 23 25 35 40 750 750 750 1000 .25 .25 .25 .25 43 40 34 31 10 10 10 10 16.7 18.2 20.6 22.8 .080 .080 .085 .085 1n3032b 1n3033b 1n3034b 1n3035b 33 36 39 43 7.5 7.0 6.5 6.0 45 50 60 70 1000 1000 1000 1500 .25 .25 .25 .25 28 26 23 21 10 10 10 10 25.1 27.4 29.7 32.7 .085 .085 .090 .090 1n3036b 1n3037b 1n3038b 1n3039b 47 51 56 62 5.5 5.0 4.5 4.0 80 95 110 125 1500 1500 2000 2000 .25 .25 .25 .25 19 18 17 15 10 10 10 10 35.8 38.8 42.6 47.1 .090 .090 .090 .090 1n3040b 1n3041b 1n3042b 1n3043b 68 75 82 91 3.7 3.3 3.0 2.8 150 175 200 250 2000 2000 3000 3000 .25 .25 .25 .25 14 12 11 10 10 10 10 10 51.7 56.0 62.2 69.2 .090 .090 .090 .090 1n3044b 1n3045b 1n3046b 1n3047b 100 110 120 130 2.5 2.3 2.0 1.9 350 450 550 700 3000 4000 4500 5000 .25 .25 .25 .25 9.0 8.3 8.0 6.9 10 10 10 10 76.0 83.6 91.2 98.8 .090 .095 .095 .095 1n3048b 1n3049b 1n3050b 1n3051b 150 160 180 200 1.7 1.6 1.4 1.2 1000 1100 1200 1500 6000 6500 7000 8000 .25 .25 .25 .25 5.7 5.4 4.9 4.6 10 10 10 10 114.0 121.6 136.8 152.0 .095 .095 .095 .100 *jedec registered data. ?not jedec data. notes: 1. when using jedec numbers, b suffi x signifies +/-5% tolerance on nominal zener voltage. the suffix a is used to identif y +/-10% tolerance; no suffix indicates +/-20% tolerance: suffix c is used to identify +/- 2%; and suffix d is used to identify +/- 1 % tolerance. 2. zener voltage ( v z ) is measured with junction in thermal equilibrium with still air at a temperature of 25 o c. the test currents (i zt ) at nominal voltages provide a constant 0.25 watts. 3. the zener impedance is derived when a 60 cycle ac current hav ing an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate unstable units. see micr onote 202 for variation in dynamic impedance with different zener currents. 4. these values of i zm may often be exceeded in the case of individual diodes. the values shown are calculated for a unit at the high voltage end of its tolerance range. allowance has also been made for the rise in zener voltage above v zt that results from zener impedance and the increase in junction temperat ure as a unit approaches thermal equilibri um at a dissipation of 1 watt. the i zm values shown for +/-5% tolerance units ma y be used with little error for +/-10% to lerance units, but should be reduced by 7% to include a +/-20% tolerance unit near the high voltage end of its tolerance range. microsemi scottsdale division page 2 copyright ? 2006 3-12-2006 rev b 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
1 watt metal case zener diodes www. microsemi . com scottsdale division 1n3016b thru 1n3051b, e3 1n3016b ? 1n3051b, e3 outline and circuit temperature coefficient mv/ o c temperature coefficient %/ o c microsemi scottsdale division page 3 copyright ? 2006 3-12-2006 rev b t l ? lead temperature ( o c) 3/8? from body nominal zener voltage (volts) or t a on fr4 pc board figure 2 figure 1 typical zener voltage temperature power derating curve coeff. vs. zener voltage figure 3 typical capacitance vs. reverse voltage for 1-watt zeners package dimensions do-13 (do-202aa) mv change / o c voltage temperature coefficient %/ o c p d - rated power dissipation ( watts ) 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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